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MMG2401NR2 1 rf device data freescale semiconductor indium gallium phosphorus hbt wlan power amplifier designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 mhz. ? 26.5 dbm p1db @ 2450 mhz ? power gain: 27.5 db typ (@ f = 2450 mhz, class ab) ? high gain, high efficiency and high linearity ? evm = 3% typ @ p out = +19 dbm, 14% pae ? pb - free leads ? in tape and reel. r2 suffix = 1,500 units per 12 mm, 7 inch reel. table 1. maximum ratings rating symbol value unit collector supply v cc 5 v base supply first stage v b1 5 v base supply second stage v b2 5 v detector bias supply v bias 5 v dc current i dc 171 ma table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to ambient r ja 185 (1) c/w case operating temperature range t c - 40 to +85 c storage temperature range t stg - 55 to +150 c table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 2 (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) ii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 1 260 c 1. simulated. document number: mmg2401 rev. 2, 4/2005 freescale semiconductor technical data 2400 - 2500 mhz, 27.5 db, 26.5 dbm 802.11g wlan power amplifier ingap hbt MMG2401NR2 case 1483 - 01 qfn 3x3 ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf device data freescale semiconductor MMG2401NR2 table 5. electrical characteristics (t a = 25 c unless otherwise noted.) v cc = 3.3 vdc, v bias = 3 vdc, i cq = 83 ma, f = 2450 mhz characteristic symbol min typ max unit output power at 1db compression p1db 24 26.5 ? dbm power gain (p out = 19 dbm) g p 26 27.5 29 db error vector magnitude (p out = 19 dbm, 64 qam/54 mbps) evm ? 3 ? % total current (p out = 19 dbm) i ctotal ? 210 ? ma quiescent current i dcq ? 156 ? ma bias control reference current (i cq = 66 ma) i ref ? 8.4 ? ma gain flatness (over 100 mhz) g f ? 0.2 ? db gain variation over temperature ( - 40 to 85 c) ? ? 1 ? db input return loss irl ? -10 - 7.5 db reverse isolation ? ? -35 ? db second harmonic (p out = 19 dbm) ? ? -45 ? dbc third harmonic (p out = 19 dbm) ? ? -35 ? dbc ramp- on time (10 - 90%) t on ? 100 ? ns
MMG2401NR2 3 rf device data freescale semiconductor table 6. functional pin description name pin number description v b1 1 base power supply for first stage amplifier. rf in 2, 3 rf input for the power amplifier. this pin is dc - shorted to gnd and ac - coupled to the transistor base of the first stage. v bias 4 detector bias voltage supply. v ref 5 detector output voltage reference. v out - v ref is useful for tracking detector performance over temperature. v out 6 detector output voltage. v cc2 7 collector power supply for second stage amplifier. rf out 8, 9 rf output for the power amplifier. this pin is dc - coupled and requires a dc - blocking series capacitor. v b2 10 base power supply for second stage amplifier. n.c. 11 not connected. v cc1 12 collector power supply for first stage amplifier. gnd backside center metal the center metal base of the qfn 3x3 package provides both dc and rf ground as well as heat sink contact for the power amplifier. figure 1. pin connections 9 8 7 6 (top view) v out rf in rf in 1 2 3 5 4 10 11 12 v b2 v ref v b1 n.c. v cc1 rf out rf out v cc2 v bias
4 rf device data freescale semiconductor MMG2401NR2 figure 2. MMG2401NR2 test circuit schematic z1, z2 0.10 x 0.5395 microstrip pcb getek ml200m, 0.005 , r = 3.8 c11 c1 c2 c3 c4 c5 c12 c10 c9 c8 c7 c6 l1 v cc2 v cc1 v b1 z1 rf input rf output c14 c15 c13 v bias v ref v out z2 v b2 table 7. MMG2401NR2 test circuit component designations and values part description part number manufacturer c1, c6 1 f chip capacitor 12065a105jat2a avx c2, c7 0.1 f chip capacitor 12065a104jat2a avx c3, c8 0.01 f chip capacitor 12065a103jat2a avx c4, c9, c11, c12 100 pf chip capacitor 08055a101fat2a avx c5, c10, c13, c14, c15 20 pf chip capacitor 12065a200cat2a avx l1 7.5 nh chip inductor 0402cs- 7n5xjbc coilcraft
MMG2401NR2 5 rf device data freescale semiconductor figure 3. MMG2401NR2 test circuit component layout freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product. v ba1 c1 c12 c2 c3 c4 c5 c11 v ba2 v cc1 c14 c15 c13 c10 c9 c8 c7 c6 v bias v ref v out v cc2 l1 lan5
6 rf device data freescale semiconductor MMG2401NR2 typical characteristics 25 24 29 0 t c = 25 c p out , output power (dbm) figure 4. power gain versus output power v cc = 3.3 vdc v b1 = 2.9 vdc f = 2450 mhz ?40 c 85 c 28 27 26 25 5101520 25 0 7 0 p out , output power (dbm) figure 5. error vector magnitude versus output power t c = 25 c v cc = 3.3 vdc v b1 = 2.9 vdc f = 2450 mhz ?40 c 85 c evm, error vector magnitude (%) 6 5 4 3 2 1 5101520 t c = ?40 c 25 0 25 0 p out , output power (dbm) figure 6. efficiency versus output power v cc = 3.3 vdc v b1 = 2.9 vdc f = 2450 mhz 25 c 85 c 20 15 10 5 5101520 25 0.01 10 0 p out , output power (dbm) figure 7. detector output voltage versus output power v out , detector output voltage (v) t c = 85 c v cc = 3.3 vdc v b1 = 2.9 vdc f = 2450 mhz 25 c ?40 c 1 0.1 5101520 30 ?4 4 0 p out , output power (dbm) figure 8. am to pm versus output power am to pm ( ) 3 2 1 0 ?1 ?2 ?3 5101520 v cc = 3.3 vdc v b1 = 2.9 vdc f = 2450 mhz 25 25 0 250 0 p out , output power (dbm) figure 9. total current versus output power i cc , total current (ma) t c = 85 c v cc = 3.3 vdc v b1 = 2.9 vdc f = 2450 mhz 25 c ?40 c 200 150 100 50 5101520 g p , power gain (db) , efficiency (%)
MMG2401NR2 7 rf device data freescale semiconductor typical characteristics 2.8 10 35 2 f, frequency (ghz) figure 10. power gain (s21) versus frequency g p , power gain (db) v cc = 3.3 vdc v b1 = 2.9 vdc 30 25 20 15 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 ?25 0 2 ?5 ?10 ?15 ?20 2.1 2.2 2.3 2.4 2.5 2.6 2.7 f, frequency (ghz) figure 11. input return loss (s11) versus frequency input return loss (db) irl, v cc = 3.3 vdc v b1 = 2.9 vdc 2.8 ?70 ?20 2 ?30 ?40 ?50 ?60 2.1 2.2 2.3 2.4 2.5 2.6 2.7 v cc = 3.3 vdc v b1 = 2.9 vdc f, frequency (ghz) figure 12. reverse transconductance isolation (s12) versus frequency reverse transconductance isolation (db) 2.8 ?25 0 2 ?5 ?10 ?15 ?20 2.1 2.2 2.3 2.4 2.5 2.6 2.7 f, frequency (ghz) figure 13. output return loss (s22) versus frequency orl, output return loss (db) v cc = 3.3 vdc v b1 = 2.9 vdc
8 rf device data freescale semiconductor MMG2401NR2 exposed pad symbols min max 1 figure 14. MMG2401NR2 specific mechanical outline information top view bottom view side view 0.25 min. 0.45 0.25 min. 2 3 1 b a c l 4x d 4x d (ny - 1)e f 2 f/2 3 e (nx - 1)e pin1 id e/2 e 1 n=12 b seating plane standard detail ?a? - pin #1 id and tie bar mark option notes: 1. dimension b applies to plated terminal and is measured between 0.20 and 0.25 mm from terminal tip. 2. n is the number of terminals (12). nx is the number of terminals in x?direction and ny is the number of terminals in y?direction. 3. all dimensions are in millimeters. 2 2 dim a min nom max 3.00 bsc b 3.00 bsc c ? 0.85 1.00 d 0.24 0.42 0.60 e f 0.18 0.23 b e 0.50 bsc ny 3 see exposed pad nx see exposed pad 3 0.30 nom e 1.30 min nom max f 1.30 1.15 1.45 1.15 1.45
MMG2401NR2 9 rf device data freescale semiconductor package dimensions b 3 3 a 2x 0.1 c c 0.1 2x pin 1 index area exposed die attach pad 10 12 64 9 7 1 3 0.10 8x 0.5 12x 9 detail g m m 1.55 1.25 1.55 1.25 0.30 0.18 12x detail m detail n pin 1 index 0.75 0.50 cab view m - m m notes: 1. all dimensions are in millimeters. 2. interpret dimensions and tolerances per asme y14.5m, 1994. 3. the complete jedec designator for this package is: hf?pqfp?n. 4. for anvil singulated qfn packages, maximum draft angled is 12 . 5. package warpage max 0.05 mm. 6. corner chamfer may not be present. dimensions of optional features are for reference only. 7. corner leads can be used for thermal or ground and are tied to the die attach pad. these leads are not included in the lead count. 8. coplanarity applies to lead, corner leads, and die attach pad. 9. this dimension applies to plated terminal and is measured between 0.20 mm and 0.25 mm from terminal tip. case 1483 - 01 issue o qfn 3x3 page 1 of 3
10 rf device data freescale semiconductor MMG2401NR2 6 detail n preferred corner configuration 6 detail n corner configuration (45 ) (0.25) (0.25) 0.60 0.24 0.60 0.24 case 1483 - 01 issue o qfn 3x3 8 detail g view rotated 90 cw 1.0 0.8 1.00 0.75 0.05 0.00 seating plane c 0.1 0.05 c c page 2 of 3
MMG2401NR2 11 rf device data freescale semiconductor case 1483 - 01 issue o qfn 3x3 (45 ) detail m preferred backside pin 1 index 0.65 0.30 tie bar mark option 7 pin 1 id 4x 0.23 0.13 4x (0.35) detail m backside pin 1 index option detail s detail m backside pin 1 index option (0.45) pin 1 id r0.2 detail s backside pin 1 index 0.217 0.137 (0.25) 0.217 0.137 (0.1) (0.25) page 3 of 3
12 rf device data freescale semiconductor MMG2401NR2 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mmg2401 rev. 2, 4/2005

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